Panasonic Transistors 2SA1791J Specifications

Transistors
2SA1791J
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC4656J
■ Features
• High transition frequency f
• Small collector output capacitance C
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: September 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
T
ob
= 25°C
a
Symbol Rating
−50
V
CBO
−50
V
CEO
−5
V
EBO
−50
I
C
P 125
C
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
V I
CBO C
V I
CEO C
V I
EBO E
I V
CBO CB
I V
CEO CE
*
h V
FE CE
V I
CE(sat) C
f V
T CB
C V
ob CB
Q R
200 to 400 250 to 500
Unit
V
V
V
1 : Base
2 : Emitter
mA
3 : Collector
mW
Marking Symbol: AL
°C
°C
Conditions
= −10 µA, I = 0
E
= −1 mA, I = 0
B
= −10 µA, I = 0
C
= −10 V, I = 0
E
= −10 V, I = 0
B
= −10 V, I = −2 mA
C
= −10 mA, I = −1 mA
B
= −10 V, I = 2 mA, f = 200 MHz
E
= −10 V, I = 0, f = 1 MHz
E
SJC00309AED
+0.05
1.60
–0.03
1.00 ±0.05
3
1 2
0.27
±0.02
(0.50)(0.50)
5˚
SSMini3-F1 Package
Min Typ
−50
−50
−5
200
− 0.1
250
1.5
Unit: mm
+0.03
0.12
–0.01
EIAJ : SC-89
Max Unit
V
V
V
− 0.1 µA
−100 µA

500
− 0.3
V
MHz
pF
1