Transistors
2SA2084
Silicon PNP epitaxial planar type
For general amplification
■ Features
• High collector-emitter voltage (Base open) V
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Collector output capacitance
(Common base, input open circuited)
Transition frequency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: January 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
CEO
= 25°C
a
Symbol
Rating
−300
V
CBO
−300
V
CEO
−5
V
EBO
−70
I
C
−100
I
CP
P
200
C
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= −100 µA, I
V
I
CEO
C
= −1 µA, , I
V
I
EBO
E
*
h
V
FE
CE
= −10 mA, I
V
I
CE(sat)
C
C
V
ob
CB
f
V
T
CB
P
Q
30 to 100
60 to 150
Unit
V
10˚
V
V
mA
mA
mW
°C
Marking Symbol: 7N
°C
Conditions
= 0
B
= 0
C
= −10 V, I
= −5 mA
C
= −1 mA
B
= −10 V, I
= 0, f = 1 MHz
E
= −10 V, I
= 10 mA, f = 200 MHz
E
SJC00286AED
+0.10
0.40
–0.05
0.16
3
1
2
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
Mini3-G1 Package
Min
Typ
Max
−300
−5
30
150
− 0.6
7
50
Unit: mm
+0.10
–0.06
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Unit
V
V
V
pF
MHz
1