HP 12606B Operating And Service Manual page 41

Disc memory interface kit
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12606B
Section VI
Table 6-2. Reference Designations and Abbreviations
REFERENCE DESIGNATIONS
A
=
assembly
J
=
receptacle connector
TB
=
terminal board
B
=
motor
K
=
relay
TP
=
test point
BT
=
battery
L
=
inductor
U
=
integrated circuit
C
=
capacitor
M
=
meter
V
=
vacuum tube, neon
CP
=
coupler
MC
=
microcircu it
bulb, photocell, etc.
CR
=
diode
P
=
plug connector
VR
=
voltage regulator
OL
=
delay line
0
=
transistor
W
=
cable, jumper
OS
=
device signaling (lamp)
R
=
resistor
X
=
socket
E
=
misc hardware
RT
=
thermistor
Y
=
crystal
F
=
fuse
S
=
switch
Z
=
tuned cavity,
FL
=
filter
T
=
transformer
network
ABBREVIATIONS
A
=
amperes
IMPG
=
impregnated
P/O
=
part of
AC
=
alternating current
IN.
=
inch, inches
POLY
=
polystyrene
AFC
=
automatic frequency control
INCO
=
incandescent
PORC
=
porcelain
ALUM
=
aluminum
INCL
=
include(s)
POS
=
position (s)
AL·ELECT
=
aluminum electrolytic
INS
=
insulation
(ed)
POT
=
potentiometer
ASSY
=
assembly
INT
=
internal
PP
=
peak-to-peak
I/O
=
input/output
PT
=
point
BFO
=
beat frequency oscillator
PWV
=
peak working voltage
BE CU
=
beryllium copper
K
=
kilo
=
1000
BH
=
binder head
LH
=
left hand
R
=
resistor
BP
=
bandpass
LIN
=
linear taper
RECT
=
rectifier
BRS
=
brass
BWO
LK WASH
=
lock washer
RF
=
radio frequency
=
backward wave oscillator
LOG
=
logarith mic taper
RH
=
round head or right hand
C
=
capacitor
LPF
=
low pass filter
RMO
=
rack mount only
CCW
=
counterclockwise
milli
=
10- 3
RMS
=
root-mean square
M
=
CER
=
ceramic
MEG
mega
=
10 6
RWV
=
reverse working voltage
=
CMO
= cabinet mount only
MET FLM
=
metal film
COEF
=
coefficient
METOX
=
metal oxide
SoB
=
slow-blow
COM
=
common
MFR
=
manufacturer
SCR
=
screw
COMP
=
composition
MHz
=
megahertz
SE
=
selenium
COMPL
=
complete
MINAT
=
miniature
SECT
=
section(s)
CONN
=
connector
MOM
=
momentary
SEMICON
=
semiconductor
CP
=
cadmium plate
MTG
=
mounting
51
=
silicon
CRT
=
cathode-ray tube
MY
=
Mylar
SIL
=
silver
CTL
=
capacitor-transistor logic
SL
=
slide
CW
=
clockwise
N
=
nano (10- 9 )
SPOT
=
single-pole, double-throw
N/C
=
normally closed
SPG
=
spring
OC
=
direct current
NE
=
neon
SPL
=
special
OEPC
=
deposited carbon
NIPL
=
nickel plate
SPST
=
single-pole, single-throw
OPOT
=
double-pole, double-throw
NO.
=
number
SR
=
split ring
OPST
=
double-pole, single-throw
N/O
=
normally open
SST
=
stai nless steel
OR
=
drive
NPN
=
negative-positive-
STL
=
steel
ELECT
=
electrolytic
negative
ENCAP
=
encapsulated
NPO
=
negative positive zero
TA
=
tantalum
EXT
=
external
(zero temperature
TO
=
time delay
coefficient)
TGL
=
toggle
F
=
farads
NRFR
=
not recommended for
THO
=
thread
FH
=
flat head
field replacement
TI
=
titanium
FIL H
=
fillister head
NSR
=
not separately replaceable
TOL
=
tolerance
FXO
=
fixed
TRIM
=
trimmer
giga (10 9 )
OBO
=
order by description
G
=
TTL
=
transistor-transistor logic
00
=
outer diameter
GE
=
germanium
TWT
=
traveling wave tube
OH
=
oval head
GL
=
glass
OX
=
oxide
GNO/GRO
=
ground(ed)
U
(Jl)
=
micro
=
10- 6
H
henries
P
=
peak
=
PC
=
printed circuit
VAR
=
variable
HOW
=
hardware
PF
=
picofarads
=
1 0- 12 farads
VOCW
=
direct current working volts
HEX
=
hexagonal
PH
=
Phillips head
HG
=
mercury
PH BRZ
=
phosphor bron?El
W/
=
with
HR
=
houris)
PHL
=
Phillips
W
=
watts
HZ
=
hertz
PIV
=
peak inverse voltage
WIV
=
working inverse voltage
10
=
inner diameter
PNP
=
positive-negative-
WW
=
wirewound
IF
=
intermediate frequency
positive
W/O
=
without
6-3

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