Panasonic Transistor 2SC5378 Specifications

Transistor
2SC5378
Silicon NPN epitaxial planer type
For low-voltage low-noise high-frequency oscillation
Features
Low noise figure NF.
High gain.
High transition frequency f
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector output capacitance
Transition frequency
Noise figure
Foward transfer gain
*1
h Rank classification
FE
Rank Q
h 80 ~ 115
FE
.
T
(Ta=25˚C)
Symbol Ratings
V 15
CBO
V 8
CEO
V 2
EBO
I 80
C
P 150
C
T 150
j
T –55 ~ +150
stg
(Ta=25˚C)
Symbol
I V = 10V, I
CBO CB
I V = 1V, I
EBO EB
*1
h V = 5V, I
FE CE
C V = 5V, I
ob CB
f V = 5V, I
T CE
NF V = 5V, I
CE
2
| S | V = 5V, I
21e CE
R S
95 ~ 155 135 ~ 200
Unit
V
V
1:Base
V
2:Emitter
3:Collector
mA
mW
Marking symbol :
˚C
˚C
Conditions
= 0
E
= 0
C
= 10mA
C
= 0, f = 1MHz
E
= 10mA, f = 2GHz
C
= 3mA, f = 1GHz
C
= 10mA, f = 1GHz
C
Unit: mm
2.1 0.1
0.425 1.25 0.1 0.425
1
3
2
0.2 0.1
EIAJ:SC–70
S–Mini Type Package
HT
min typ max
1
1
80 200
0.6 1
7
1.6 2
8.5 11
Unit
A
A
pF
GHz
dB
dB
1