Panasonic Transistors 2SC5632G Specifications

Transistors
2SC5632G
Silicon NPN epitaxial planar type
For high-frequency amplification and switching
■ Features
• High transition frequency f
• S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*
h ratio
FE
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : ∆h = h
/ h
FE FE2 FE1
Publication date: June 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
T
= 25°C
a
Symbol Rating
V 15
CBO
V
CEO
V
EBO
I 50
C
P 150
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V I
CBO C
I V
EBO EB
h V
FE CE
∆h
h
FE FE2
h
FE1
V I
CE(sat) C
f V
T CE
C V
ob CB
■ Package
• Code
• Marking Symbol: 2R
• Pin Name
Unit
V
8 V
3 V
mA
mW
°C
°C
Conditions
= 100 µA, I = 0
E
= 2 V, I = 0
C
= 4 V, I = 2 mA
C
= 4 V, I = 100 µA
: V
CE C
= 4 V, I = 2 mA
: V
CE C
= 20 mA, I = 4 mA
B
= 5 V, I = 15 mA, f = 200 MHz
C
= 10 V, I = 0, f = 1 MHz
E
SJC00369AED
SMini3-F2
1: Base
2: Emitter
3: Collector
Min Typ
15
100
0.6
0.6 1.1
1.0
Max Unit
V
µA
2

350

1.5
0.1 V
GHz
1.6 pF
1