Panasonic Transistors 2SC3930G Specifications

Transistors
2SC3930G
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1532G
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency f
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Transition frequency
Noise figure
Reverse transfer impedance
Reverse transfer capacitance
(Common emitter)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Publication date: April 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
T
= 25°C
a
Symbol Rating
V 30
CBO
V 20
CEO
V
EBO
I 30
C
P 150
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
I V
CBO CB
*
h V
FE CB
f V
T CB
NF V
CB
Z V
rb CB
C V
re CB
B C
70 to 140 110 to 220
Unit
V
V
5 V
mA
mW
°C
°C
Conditions
= 10 V, I = 0
E
= 10 V, I = −1 mA
E
= 10 V, I = −1 mA, f = 200 MHz
E
= 10 V, I = −1 mA, f = 5 MHz
E
= 10 V, I = −1 mA, f = 2 MHz
E
= 10 V, I = −1 mA, f = 10.7 MHz
E
SJC00357AED
■ Package
• Code
SMini3-F2
• Marking Symbol: V
• Pin Name
1. Base
2. Emitter
3. Collector
Min Typ Max
0.1
70 220
150 250
2.8 4.0
22 50
0.9 1.5
Unit
µA

MHz
dB
Ω
pF
1