Panasonic Transistors 2SC1318 Specifications

Transistors
2SC1318
Silicon NPN epitaxial planar type
For low-frequency power amplification and driver amplification
Complementary to 2SA0720
 Features
 Low collector-emitter saturation voltage V
 Complementary pair with 2SA0720
 Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
 Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE1
Publication date : October 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
CE(sat)
= 25°C
a
Symbol Rating
V 60
CBO
V 50
CEO
V 7
EBO
I 0.5
C
I 1
CP
P 625
C
T 150
j
T –55 to +150
stg
= 25°C±3°C
a
Symbol
V I = 10 mA, I
CBO C
V I = 10 mA, I
CEO C
V I = 10 mA, I
EBO E
I V = 20 V, I
CBO CB
h * V = 10 V, I
FE1 CE
h V = 10 V, I
FE2 CE
V I = 300 mA, I
CE(sat) C
V I = 300 mA, I
BE(sat) C
f V = 10 V, I
T CB
C V = 10 V, I
re CB
Q R
85 to 170 120 to 240
SJC00420AED
 Package
 Code
TO-92B-B1
 Pin Name
1. Emitter
2. Collector
Unit
3. Base
V
V
V
A
A
mW
°C
°C
Conditions
= 0
E
= 0
B
= 0
C
= 0
E
= 150 mA
C
= 500 mA
C
= 30 mA
B
= 30 mA
B
= –50 mA, f = 200 MHz
E
= 0, f = 1 MHz
E
S
170 to 340
Min Typ Max Unit
60
50
7
0.1
85 340
40
0.35 0.60
1.1 1.5
200 MHz
6 15
V
V
V
mA

V
V
pF
1