Panasonic Transistors 2SC3937G Specifications

Transistors
2SC3937G
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
■ Features
• Low noise figure NF
• High forward transfer gain S
• High transition frequency f
• S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Forward transfer gain
Maximum unilateral power gain
Noise figure
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: April 2007
This product complies with the RoHS Directive (EU 2002/95/EC).

2
21e
T
= 25°C
a
Symbol Rating
V 15
CBO
V 10
CEO
V
EBO
I 80
C
P 150
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
I V
CBO CB
I V
EBO EB
h V
FE1 CE
h V
FE2 CE
f V
T CE
C V
ob CB
S 
2
V
21e CE
G V
UM CE
NF V
CE
Unit
V
V
2 V
mA
mW
°C
°C
Conditions
= 15 V, I = 0
E
= 1 V, I = 0
C
= 8 V, I = 20 mA
C
= 1 V, I = 3 mA
C
= 8 V, I = 20 mA, f = 0.8 GHz
C
= 10 V, I = 0, f = 1 MHz
E
= 8 V, I = 20 mA, f = 0.8 GHz
C
= 8 V, I = 20 mA, f = 0.8 GHz
C
= 8 V, I = 7 mA, f = 0.8 GHz
C
SJC00363AED
■ Package
• Code
SMini3-F2
• Marking Symbol: 2W
• Pin Name
1. Base
2. Emitter
3. Collector
Min Typ Max
1
1
50 300
80 280
6
0.7 1.2
13
14
1.0 1.7
Unit
µA
µA

GHz
pF
dB
dB
dB
1