Panasonic Transistors 2SC4805G Specifications

Transistors
2SC4805G
Silicon NPN epitaxial planar type
For 2 GHz band low-noise amplification
■ Features
• High transition frequency f
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Forward transfer gain
Maximum unilateral power gain
Noise figure
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Marking symbol
Product of no-rank is not classified and have no indication for rank.
Publication date: May 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
T
= 25°C
a
Symbol Rating
V 15
CBO
V 10
CEO
V
EBO
I 65
C
P 150
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
I V
CBO CB
I V
EBO EB
*
h V
FE CE
f V
T CE
C V
ob CB
S 
2
V
21e CE
G V
UM CE
NF V
CE
Q R
50 to 120 100 to 170
3SQ 3SR
■ Package
• Code
• Marking Symbol: 3S
• Pin Name
Unit
V
V
2 V
mA
mW
°C
°C
Conditions
= 10 V, I = 0
E
= 1 V, I = 0
C
= 8 V, I = 20 mA
C
= 8 V, I = 15 mA, f = 1.5 GHz
C
= 10 V, I = 0, f = 1 MHz
E
= 8 V, I = 15 mA, f = 1.5 GHz
C
= 8 V, I = 15 mA, f = 1.5 GHz
C
= 8 V, I = 7 mA, f = 1.5 GHz
C
S No-rank
150 to 300 50 to 300
3SS 3S
SJC00367AED
SMini3-F2
1: Base
2: Emitter
3: Collector
Min Typ
50
7.0 8.5
0.6
7 9
10
2.2
Max Unit
µA
1
µA
1

300
GHz
1.0 pF
dB
dB
3.0 dB
1