Panasonic Transistors 2SC4691J Specifications

Transistors
2SC4691J
Silicon NPN epitaxial planar type
For high-speed switching
■ Features
• Low collector-emitter saturation voltage V
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Turn-off time
Storage time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Product of no-rank is not classified and have no indication for rank.
Publication date: January 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
CE(sat)
= 25°C
a
Symbol Rating
V 40
CBO
V 40
CES
V 5
EBO
I 100
C
I 300
CP
P 125
C
T 125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
I V
CBO CB
I V
EBO EB
*
h V
FE CE
= 10 mA, I
V I
CE(sat) C
= 10 mA, I
V I
BE(sat) C
f V
T CB
C V
ob CB
t Refer to the measurement circuit
on
t
off
t
stg
Q R
60 to 120 90 to 200
Unit
V
V
V
mA
mA
mW
Marking Symbol: 2Y
°C
°C
Conditions
= 40 V, I = 0
E
= 4 V, I = 0
C
= 1 V, I = 10 mA
C
= 1 mA
B
= 1 mA
B
= 10 V, I = −10 mA, f = 200 MHz
E
= 10 V, I = 0, f = 1 MHz
E
No-rank
60 to 200
SJC00282BED
+0.05
1.60
–0.03
0.12
1.00 ±0.05
3
1 2
0.27 ±0.02
(0.50)(0.50)
5˚
SSMini3-F1 Package
Min Typ Max
0.1
0.1
60 200
0.17 0.25
1.0
450
2
17
17
10
Unit: mm
+0.03
–0.01
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
Unit
µA
µA

V
V
MHz
6 pF
ns
ns
ns
1