Epson Power Supply IC S1F70000 Technical Manual page 164

Diodes
Shindengen DINS4 Schottky barrier diodes
Parameter
Forward voltage
Reverse current
Junction-to-lead thermal resistance
Junction-to-ambient thermal resistance
Characteristics
5
Tp = 25 ˚C (Typ.)
Tp = 125 ˚C (Typ.)
2
1
Tp =125 ˚C (Max.)
0.5
0.2
0.1
0.05
0 0.2 0.4 0.6
Forward voltage (V)
Smoothing capacitors
NEC MSV series capacitors
Package
Device
type
MSVAOJ475M A
MSVB2OJ106M B2
MSVB2OJ156M B2
MSVBOJ156M B
MSVCOJ336M C
MSVD2OJ686M D2
MSVDOJ686M D
Note
The figures on the previous pages show data from the documents of various manufactures. For further details,
please contact the relevant manufacture.
S1F70000 Series
Technical Manual
Symbol
I
V
F
pulse measurement
V
I
R
pulse measurement
jl
ja
Tp = 25 ˚C (Max.)
0.8 1.0 1.2 1.4
Rated Static capacitance
voltage (V) ( F)
6.3 4.7
6.3 10
6.3 15
6.3 15
6.3 33
6.3 68
6.3 68
EPSON
Condition
Min. Typ. Max.
= 1.1A,
F
—
= V ,
R RM
—
—
—
Tan
+25, +85 +125
˚C ˚C
0.08 0.1
0.08 0.1
0.08 0.1
0.08 0.1
0.08 0.1
0.08 0.1
0.08 0.1
S1F76300 Series
Rating
Unit
— 0.55 V
— 1 mA
— 23 ˚C/W
— 157 ˚C/W
Leakage
–55
current ( A)
˚C
0.12 0.5
0.12 0.6
0.12 0.9
0.12 0.9
0.12 2.0
0.12 4.2
0.12 4.2
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