Epson Power Supply IC S1F70000 Technical Manual page 176

Diodes
Shindengen DINS4 Schottky barrier diodes
Parameter
Forward voltage
Reverse current
Junction-to-lead thermal resistance
Junction-to-ambient thermal resistance
Characteristics
5
Tp = 25 ˚C (Typ.)
Tp = 125 ˚C (Typ.)
2
1
0.5
0.2
0.1
0.05
0 0.2 0.4 0.6
Forward voltage (V)
Smoothing capacitors
NEC MSV series capacitors
Package
Device
type
MSVA0J475M A
MSVB20J106M B2
MSVB20J156M B2
MSVB0J156M B
MSVC0J336M C
MSVD20J686M D2
MSVD0J686M D
Note
The figures on the previous pages show data from the documents of various manufacturers. For further details,
please contact the relevant manufacturer.
S1F70000 Series
Technical Manual
Symbol
V
F
I
R
jl
ja
Tp = 25 ˚C (Max.)
Tp = 125 ˚C (Max.)
0.8 1.0 1.2 1.4
Static capacitance
Voltage (V)
( F)
6.3
6.3
6.3
6.3
6.3
6.3
6.3
EPSON
Conditions
I = 1.1A,
F
pulse measurement
V = V ,
R RM
pulse measurement
Tan
+25, +85 +125
˚C ˚C
4.7 0.08 0.1
10 0.08 0.1
15 0.08 0.1
15 0.08 0.1
33 0.08 0.1
68 0.08 0.1
68 0.08 0.1
S1F76300 Series
Rating
Unit
Min. Typ. Max.
— — 0.55 V
— — 1 mA
— — 23 ˚C/W
— — 157 ˚C/W
Leakage
–55
current ( A)
˚C
0.12 0.5
0.12 0.6
0.12 0.9
0.12 0.9
0.12 2.0
0.12 4.2
0.12 4.2
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