Toshiba Aquilion TSX-101A/I Series Site Planning Manual page 66

(2) Necessity of countermeasures against static electricity
CT systems contain various semiconductor devices which are very sensitive to static
electricity.
The following table shows the static electricity levels at which each device is damaged.
Type of component
VMOS
MOS FET
GaAs FET
EPROM
JFET
SAW
OP-AMP
CMOS
Schottky diodes
Film resistors
Bipolar transistors
ECL
SCR
Schottky TTL
The level of static electricity that can cause damage differs depending on the type of
device. Damage may be result from static electricity levels of less than 100 V as shown in
the above table. This system conforms to EMC standards IEC60601-1-2 and therefore is
not damaged due to supplied voltage of 3 kV (contact) or 8 kV (in the air).
If this system is to be used in an atmosphere where static electricity of more than 3 kV is
present, countermeasures against static electricity must include the CT system as well as
the environment in which the CT system is installed as targets.
Table A.1.2-1
Voltage range resulting in
component damage (V)
30 to 1,800
100 to 200
100 to 300
100
140 to 7,000
150 to 500
190 to 2,500
250 to 3,000
300 to 2,500
300 to 3,000
380 to 7,000
500 to 1,500
680 to 1,000
1,000 to 2,500
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