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A18–A0
CE
CE
OE
OE
WE
I/O7–I/O0
Note: Data is latched on the rising edge of WE.
Figure 22-18 Timing Waveforms for Memory Read after Memory Write
Table 22-14 AC Characteristics in Transition from Memory Read Mode to Another Mode
(Conditions: V
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
WE rise time
WE fall time
824
Command write
t
t
ces
ceh
t
wep
t
t
f
r
t
t
ds
dh
= 3.3 V ±0.3 V, V
CC
Symbol
t
nxtc
t
ceh
t
ces
t
dh
t
ds
t
wep
t
r
t
f
Memory read mode
Address stable
t
nxtc
= 0 V, T
= 25°C ±5°C)
SS
a
Min
20
0
0
50
50
70
—
—
Max
Unit
—
µs
—
ns
—
ns
—
ns
—
ns
—
ns
30
ns
30
ns
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