Flash Memory Characteristics - Hitachi H8S/2646 Hardware Manual

23.7

Flash Memory Characteristics

Table 23-10 shows the flash memory characteristics.
Table 23-10 Flash Memory Characteristics
Conditions: V = PWMV
CC
V = 4.5 V to AV
ref
T = 0 to +75°C (Programming/erasing operating temperature range: regular
a
specification)
Item
*1* 2 *4
Programming time
*1 *3 *5
Erase time
Reprogramming count
Programming Wait time after SWE bit setting
Wait time after PSU bit setting
Wait time after P bit setting
Wait time after P bit clear
Wait time after PSU bit clear
Wait time after PV bit setting
Wait time after H'FF dummy
* 1
write
Wait time after PV bit clear
Wait time after SWE bit clear
Maximum programming count
Erase Wait time after SWE bit setting
Wait time after ESU bit setting
Wait time after E bit setting
Wait time after E bit clear
Wait time after ESU bit clear
Wait time after EV bit setting
778
= 4.5 V to 5.5 V, LPV
CC
, V PWMV
CC SS SS
Symbol
t
P
t
E
N
WEC
*1
t
sswe
* 1
t
spsu
* 1* 4
t
sp30
t
sp200
t
sp10
*1
t
cp
*1
t
cpsu
* 1
t
spv
t
spvr
* 1
t
cpv
*1
t
cswe
* 1* 4
N
*1
t
sswe
* 1
t
sesu
* 1* 5
t
se
*1
t
ce
*1
t
cesu
* 1
t
sev
= 4.5 V to 5.5 V, AV
CC
= PLLV , AV = 0 V
SS SS
Min Typ Max
— 10 200
— 100 1200
— — 100
1 1 —
50 50 —
28 30 32
198 200 202
8 10 12
5 5 —
5 5 —
4 4 —
2 2 —
2 2 —
100 100 —
— — 1000
1 1 —
100 100 —
10 10 100
10 10 —
10 10 —
20 20 —
= 4.5 V to 5.5 V,
CC
Unit Test Condition
ms/
128 bytes
ms/block
Times
µs
µs
µs Programming
time wait
µs Programming
time wait
µs Additional-
programming
time wait
µs
µs
µs
µs
µs
µs
Times
µs
µs
ms Erase time wait
µs
µs
µs