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Table 15-11 PROM Mode Commands
Command Name
Memory read mode
Auto-program mode
Auto-erase mode
Status read mode
RA
: Read address
WA
: Program address
Dout
: Read data
Din
: Program data
Note: In auto-program mode, 129 cycles are required for command writing by a simultaneous
128-byte write.
Table 15-12 DC Characteristics in Memory Read Mode
= 5.0 V ± 10%, V
(Conditions: V
CC
Item
Input high
0
–0
7
voltage
Input low
0
–0
7
voltage
Schmitt trigger OE, CE, WE
input voltage
Output high
0
–0
7
voltage
Output low
0
–0
7
voltage
Input leakage
0
–0
7
current
V
current
Reading
CC
Programming I
Erasing
Note: For the electrical characteristics of the flash memory version, see section 18.2.1, Absolute
Maximum Ratings.
Exceeding the absolute maximum ratings may cause permanent damage to the chip.
Number
of Cycles
Mode
1
Write
129
Write
2
Write
2
Write
= 0 V, T
SS
Symbol
, A
–A
V
0
16
0
IH
, A
–A
V
0
16
0
IL
–
V
T
+
V
T
+
–
V
– V
T
T
V
0
OH
V
0
OL
, A
–A
| I
|
0
16
0
LI
I
cc
cc
I
cc
1st Cycle
Address Data
X
H'00
X
H'40
X
H'20
X
H'71
= 25°C ± 5°C)
a
Min
Typ
Max
2.2
—
Vcc + 0.3
0.3
—
0.8
1.0
—
2.5
2.0
—
3.5
0.4
—
—
2.4
—
—
—
—
0.45
—
—
2
—
40
65
—
50
85
—
50
85
2nd Cycle
Mode
Address
Read
RA
Write
WA
Write
X
Write
X
Unit
Test Conditions
V
V
V
V
V
= – 200 µA
V
I
OH
V
I
= 1.6 mA
OL
µA
mA
mA
mA
Data
Dout
Din
H'20
H'71
473
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