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Table 18-15 Flash Memory Characteristics (2)
Conditions:
V
=3.0 V to 3.6 V, AV
CC
T
=0°C to +75°C (Programming/erasing operating temperature range: regular
a
specification) T
range: wide-range specification)
Item
1,
2,
4
Programming time*
*
*
1,
3,
5
Erase time*
*
*
Reprogramming count
Programming
Wait time after SWE bit setting*
Wait time after PSU bit setting*
Wait time after P bit setting*
Wait time after P bit clear*
Wait time after PSU bit clear*
Wait time after PV bit setting*
Wait time after H'FF dummy write*
Wait time after PV bit clear*
Maximum programming count*
Erase
Wait time after SWE bit setting*
Wait time after ESU bit setting*
Wait time after E bit setting*
Wait time after E bit clear*
Wait time after ESU bit clear*
Wait time after EV bit setting*
Wait time after H'FF dummy write*
Wait time after EV bit clear*
Maximum erase count*
Notes:
1.
Make each time setting in accordance with the program/program-verify flowchart or erase/erase-verify flowchart.
2.
Programming time per 32 bytes (Shows the total period for which the P-bit in the flash memory control register
(FLMCR) is set. It does not include the programming verification time.)
3.
Block erase time (Shows the total period for which the E-bit in FLMCR is set. It does not include the erase
verification time.)
4.
To specify the maximum programming time (t
value (403) for the maximum programming count (N).
The wait time after P bit setting (z) should be changed as follows according to the programming counter value.
Programming counter value of 1 to 4 :
Programming counter value of 5 to 403 :
5.
For the maximum erase time (t
(z) and the maximum erase count (N):
(max) = Wait time after E bit setting (z) × maximum erase count (N)
t
E
To set the maximum erase time, the values of z and N should be set so as to satisfy the above formula.
Examples: When z = 5 [ms], N = 60 times
550
CC
=0°C to +85°C (Programming/erasing operating temperature
a
1
1
1,
4
*
1
1
1
1
1
1,
4
*
1
1
1,
5
*
1
1
1
1
1
1,
5
*
(max)), the following relationship applies between the wait time after E bit setting
E
When z = 10 [ms], N = 30 times
=3.0 V to 3.6V, V
=AV
SS
Symbol
Min
Typ
t
—
10
P
t
—
100
E
N
—
—
WEC
x
10
—
y
50
—
z
150
—
α
10
—
β
10
—
γ
4
—
ε
2
—
η
4
—
N
—
—
x
10
—
y
200
—
z
5
—
α
10
—
β
10
—
γ
20
—
ε
2
—
η
5
—
N
30
—
(max)) in the 32-byte programming flowchart, set the maximum
P
z = 150 µs
z = 500 µs
=0V
SS
Max
Unit
200
ms/32 bytes
300
ms/block
100
Times
µs
—
µs
—
µs
500
µs
—
µs
—
µs
—
µs
—
µs
—
403
Times
µs
—
µs
—
10
ms
µs
—
µs
—
µs
—
µs
—
µs
—
60
Times
Test
Condition
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