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(8) Do not perform additional programming. Reprogram flash memory after erasing.
With on-board programming, program to 32-byte programming unit blocks one time only.
Program to 128-byte programming unit blocks one time only even in the PROM mode. Erase
all the programming unit blocks before reprogramming.
Bus release must also be disabled.
(9) Before programming, check that the chip is correctly mounted in the PROM programmer.
Overcurrent damage to the device can result if the index marks on the PROM programmer
socket, socket adapter, and chip are not correctly aligned.
(10) Do not touch the socket adapter or chip during programming. Touching either of these can
cause contact faults and write errors.
φ
V
CC
FWE
1
MD
to MD
*
2
0
RES
SWE bit
Flash memory access disabled period
(x: Wait time after SWE setting)
Flash memory reprogrammable period
(Flash memory program execution and data read, other than verify, are disabled.)
Notes:
Always fix the level by pulling down or pulling up the mode pins (MD
1.
until powering off, except for mode switching.
2.
See 18.2.5 Flash Memory Characteristics.
486
Wait time: x
t
OSC1
t
t
MDS
2
*
Figure 15-25 Powering On/Off Timing (Boot Mode)
Programming and
erase possible
MDS
SWE
set
min 0µs
min 0µs
SWE
clear
to MD
2
)
0
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