NEC 78K0 Series User Manual page 611

Flash Memory Programming Characteristics
= −40 to +85°C, 2.7 V ≤ V
(T
A
(1) Basic characteristics
Parameter
V supply current
DD
Note 1
Erase time All block
Block unit
Write time
Number of rewrites per chip
Notes 1. The prewrite time before erasure and the erase verify time (writeback time) are not included.
When a product is first written after shipment, "erase → write" and "write only" are both taken as one
2.
rewrite.
Remark f : Main system clock oscillation frequency
XP
(2) Serial write operation characteristics
Parameter
Time from RESET↑ to FLMD0
count start
Count execution time
FLMD0 counter high-/low-level
width
FLMD0 counter rise/fall time
Remark These values may change after evaluation.
Serial Write Operation
V
DD
RESET
0 V
V
DD
FLMD0
0 V
CHAPTER 29 ELECTRICAL SPECIFICATIONS (TARGET)
≤ 5.5 V, AV ≤ V
= EV
DD DD REF
Symbol
I f = 10 MHz (TYP.), 20 MHz (MAX.)
DD XP
T
eraca
T
erasa
T
wrwa
C Retention: 10 years
erwr
1 erase + 1 write after erase = 1 rewrite
Symbol
T
RFCF
T
COUNT
T /T
CH CL
T /T
R F
T T
RFCF CL
Preliminary User's Manual U17260EJ3V1UD
, V = EV = AV = 0 V)
DD SS SS SS
Conditions
Note 2
Conditions
T
C
T
COUNT
T
CH
T
F
T
C
MIN. TYP. MAX.
4.5 11.0
20 200
20 200
TBD TBD
100 Times
MIN. TYP. MAX.
4.1 17.1
10.8 13.2
× 0.45
12.5
T
R
Unit
mA
ms
ms
µ
s
Unit
ms
ms
µ
s
µ
s
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