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22 ELECTRICAL CHARACTERISTICS
22.6 Flash Memory Characteristics
Unless otherwise specified: V
DD
Item
*1
Programming count
*1 Assumed that Erasing + Programming as count of 1. The count includes programming in the factory for shipment with ROM data
programmed.
22.7 Input/Output Port (PPORT) Characteristics
Unless otherwise specified: V
DD
Item
High level Schmitt input threshold
voltage
Low level Schmitt input threshold
voltage
Schmitt input hysteresis voltage
High level output current
Low level output current
Leakage current
Input pull-up resistance
Input pull-down resistance
Pin capacitance
22-8
= 2.4 to 5.5 V, V
= 0 V, Ta = -40 to 85°C
SS
Symbol
C
Programmed data is guaranteed to be retained for
FEP
10 years.
= 1.8 to 5.5 V, V
= 0 V, Ta = -40 to 85°C
SS
Symbol
V
T+
V
T-
DV
T
I
V
= 0.9 × V
OH
OH
DD
I
V
= 0.1 × V
OL
OL
DD
I
LEAK
R
INU
R
IND
C
IN
High level
Low level
0
Seiko Epson Corporation
Condition
Condition
V
-
V
+
V
T
T
DD
Input voltage [V]
Min.
Typ.
Max.
1,000
–
–
Min.
Typ.
Max.
0.5 × V
–
0.8 × V
DD
DD
0.2 × V
–
0.5 × V
DD
DD
180
–
–
–
–
-0.5
0.5
–
–
-150
–
150
100
200
500
100
200
500
–
–
15
S1C31D50/D51 TECHNICAL MANUAL
(Rev. 2.00)
Unit
times
Unit
V
V
mV
mA
mA
nA
kW
kW
pF
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