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23 ELECTRICAL CHARACTERISTICS
OSC3 oscillator circuit characteristics
Unless otherwise specified: V
DD
Item
Crystal/ceramic oscillator
oscillation start time
Crystal/ceramic oscillator
internal gate capacitance
Crystal/ceramic oscillator
internal drain capacitance
Internal oscillator
oscillation start time
Internal oscillator
oscillation frequency
*1 Corrected value immediately after the auto-trimming operation has completed.
OSC3 internal oscillation frequency-temperature characteristic
Typ. value
18
CLGOSC3.OSC3FQ[1:0] bits = 0x3
16
14
12
10
8
6
4
2
0
-50
-25
0
EXOSC external clock input characteristics
Unless otherwise specified: V
DD
Item
EXOSC external clock duty ratio
High level Schmitt input threshold voltage V
Low level Schmitt input threshold voltage
Schmitt input hysteresis voltage
V
T+
EXOSC
23.6 Flash Memory Characteristics
Unless otherwise specified: V
DD
Item
Programming count
*2
*1 The potential variation of the V
mounting board while the Flash is being programmed, as it affects the Flash memory characteristics (programming count).
*2 Assumed that Erasing + Programming as count of 1. The count includes programming in the factory for shipment with ROM data
programmed.
23-8
= 1.8 to 5.5 V, V
= 0 V, Ta = 25°C
SS
Symbol
Condition
t
CLGOSC3.OSC3MD bit = 1, Crystal resonator
sta3C
CLGOSC3.OSC3MD bit = 1, Ceramic resonator
C
CLGOSC3.OSC3MD bit = 1
GI3C
C
CLGOSC3.OSC3MD bit = 1
DI3C
t
CLGOSC3.OSC3MD bit = 0
sta3I
f
CLGOSC3.OSC3MD bit = 0,
OSC3I
CLGOSC3.OSC3FQ[1:0] bits = 0x3
CLGOSC3.OSC3MD bit = 0,
CLGOSC3.OSC3FQ[1:0] bits = 0x1
CLGOSC3.OSC3MD bit = 0,
CLGOSC3.OSC3FQ[1:0] bits = 0x0
CLGOSC3.OSC3MD bit = 0,
CLGOSC3.OSC3FQ[1:0] bits = 0x3
0x1
0x0
25
50
75
100
Ta [°C]
= 1.8 to 5.5 V, V
= 0 V, Ta = -40 to 85°C
SS
Symbol
t
t
EXOSCD
EXOSCD
T+
V
T-
DV
T
t
= 1/f
EXOSC
EXOSC
t
EXOSCH
V
T+
V
T-
= 2.2 to 5.5 V
, V
= 0 V, Ta = -40 to 85°C
*1
SS
Symbol
C
Programmed data is guaranteed to be retained for
FEP
10 years.
voltage should be suppressed to within ±0.3 V on the basis of the ground potential of the MCU
SS
Seiko Epson Corporation
Ta
0 to 85°C
-40 to 0°C
0 to 85°C
-40 to 0°C
0 to 85°C
-40 to 0°C
*1
Condition
= t
/t
EXOSCH
EXOSC
t
EXOSC
t
EXOSCH
V
T+
Condition
Min.
Typ.
Max.
–
–
20
–
–
1
–
5
–
–
5
–
–
–
200
15.84
16
16.16
15.76
16
16.24
7.92
8
8.08
7.88
8
8.12
3.96
4
4.04
3.94
4
4.06
15.84
16
16.16
Min.
Typ.
Max.
46
–
54
0.5 × V
–
0.8 × V
DD
0.2 × V
–
0.5 × V
DD
180
–
–
= 1/f
EXOSC
V
T+
V
T-
Min.
Typ.
Max.
1,000
–
–
S1C31D41 TECHNICAL MANUAL
Unit
ms
ms
pF
pF
µs
MHz
MHz
MHz
MHz
MHz
MHz
MHz
Unit
%
V
DD
V
DD
mV
Unit
times
(Rev. 1.1)
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