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23 Electrical Characteristics
23.1 Absolute Maximum Ratings
Item
Power supply voltage
QSPI-Flash interface power supply
voltage
Flash programming voltage
Input voltage
Output voltage
High level output current
Low level output current
Operating temperature
Storage temperature
23.2 Recommended Operating Conditions
Item
Power supply voltage
QSPI-Flash interface power supply
voltage
OSC1 oscillator oscillation frequency
OSC3 oscillator oscillation frequency
EXOSC external clock frequency
Bypass capacitor between V
SS
Capacitor between V
and V
SS
D1
Capacitor between V
and V
SS
DDQSPI
Gate capacitor for OSC1 oscillator
Drain capacitor for OSC1 oscillator
Gate capacitor for OSC3 oscillator
Drain capacitor for OSC3 oscillator
Debug pin pull-up resistors
Capacitor between V
and V
SS
PP
Capacitor between V
and V
SS
REFA
*1 The potential variation of the V
mounting board while the Flash is being programmed, as it affects the Flash memory characteristics (programming count).
*2 The component values should be determined after performing matching evaluation of the resonator mounted on the printed
circuit board actually used.
*3 R
are not required when using the debug pins as general-purpose I/O ports.
DBG1–2
*4 The component values should be determined after evaluating operations using an actual mounting board.
S1C31D41 TECHNICAL MANUAL
(Rev. 1.1)
Symbol
V
DD
V
DDQSPI
V
PP
V
#RESET, TEST, P10–17, P40, P42–43, PD2–D3
I
P00–07, P20–27, P30–37, P41, P44–45,
P50–56, P60–65, PD0–D1
V
O
I
1 pin
OH
Total of all pins
I
1 pin
OL
Total of all pins
Ta
Tstg
Symbol
V
For normal operation
DD
V
voltage mode = mode1
D1
For Flash programming
V
For P60–65
DDQSPI
and QSPI
f
Crystal oscillator
OSC1
f
Crystal/ceramic oscillator
OSC3
f
When supplied from an external oscillator
EXOSC
and V
C
DD
PW1
C
PW2
C
VDDQSPI
C
When crystal oscillator is used *2
G1
C
When crystal oscillator is used *2
D1
C
When crystal/ceramic oscillator is used *2
G3
C
When crystal/ceramic oscillator is used *2
D3
R
*3
DBG1–2
C
VPP
C
VREFA
voltage should be suppressed to within ±0.3 V on the basis of the ground potential of the MCU
SS
Seiko Epson Corporation
23 ELECTRICAL CHARACTERISTICS
Condition
Condition
When QSPI is used
When QSPI is not used
(V
= 0 V)
SS
Rated value
Unit
-0.3 to 7.0
V
-0.3 to 7.0
V
-0.3 to 8.0
V
-0.3 to V
+ 0.5
V
DD
-0.3 to 7.0
V
-0.3 to V
+ 0.5
V
DD
-10
mA
-20
mA
10
mA
20
mA
-40 to 85
°C
-65 to 125
°C
(V
= 0 V) *1
SS
Min.
Typ.
Max.
Unit
1.8
–
5.5
V
1.8
–
3.6
V
2.2
–
5.5
V
3.0
–
3.6
V
1.8
–
5.5
V
–
32.768
–
kHz
0.2
–
16.3
MHz
0.016
–
16.3
MHz
–
3.3
–
µF
–
1.0
1.2
µF
–
3.3
–
µF
0
–
25
pF
–
0
–
pF
0
–
100
pF
0
–
100
pF
–
100
–
kW
–
0.1
–
µF
–
0.1
–
µF
23-1
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