Figure 13.25 Basic Timing For Synchronous Dram Single Read - Hitachi SH7751 Hardware Manual

CKIO
Bank
Precharge-sel
Address
RD/
DQMn
D31–D0
(read)
CKE
DACKn
(SA: IO ← memory)
Note: For DACKn, an example is shown where CHCRn.AL (access level) = 0 for the DMAC.

Figure 13.25 Basic Timing for Synchronous DRAM Single Read

Burst Write: The timing chart for a burst write is shown in figure 13.26. In the SH7751 Series, a
burst write occurs only in the event of 32-byte transfer. In a burst write operation, the WRIT
command is issued in the Tc1 cycle following the Tr cycle in which the ACTV command is output
and, 4 cycles later, the WRITA command is issued. In the write cycle, the write data is output at
the same time as the write command. In the case of the write with auto-precharge command,
precharging of the relevant bank is performed in the synchronous DRAM after completion of the
write command, and therefore no command can be issued for the same bank until precharging is
completed. Consequently, in addition to the precharge wait cycle, Tpc, used in a read access, cycle
Trwl is also added as a wait interval until precharging is started following the write command.
Issuance of a new command for the synchronous DRAM is postponed during this interval. The
number of Trwl cycles can be specified by bits TRWL2–TRWL0 in MCR. Access starts from 16-
byte boundary data, and 32-byte boundary data is written in wraparound mode. DACK is asserted
two cycles before the data write cycle.
Rev. 3.0, 04/02, page 398 of 1064
Tr Trw Tc1 Tc2
Row
Row
Row
Tc3 Tc4/Td1 Td2 Td3
H/L
c1
c1
Td4 Tpc