Philips Semiconductors
Volume 1
4.3 MAM blocks
The Memory Accelerator Module is divided into several functional blocks:
Figure 12
In the following descriptions, the term "fetch" applies to an explicit Flash read request from
the ARM. "Pre-fetch" is used to denote a Flash read of instructions beyond the current
processor fetch address.
4.3.1 Flash memory bank
There is one bank of Flash memory with the LPC2101/02/03 MAM.
Flash programming operations are not controlled by the MAM but are handled as a
separate function. A "boot block" sector contains flash programming algorithms that may
be called as part of the application program and a loader that may be run to allow serial
programming of the flash memory.
4.3.2 Instruction latches and data latches
Code and Data accesses are treated separately by the Memory Accelerator Module.
There is a 128-bit Latch, a 15-bit Address
User manual
•
A Flash Address Latch and an incrementor function to form prefetch addresses
•
A 128-bit Prefetch Buffer and an associated Address latch and comparator
•
A 128-bit Branch Trail Buffer and an associated Address latch and comparator
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A 128-bit Data Buffer and an associated Address latch and comparator
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Control logic
•
Wait logic
shows a simplified block diagram of the Memory Accelerator Module data paths.
ARM LOCAL BUS
Fig 12. Simplified block diagram of the Memory Accelerator Module (MAM)
Rev. 01 — 12 January 2006
MEMORY ADDRESS
BUS
INTERFACE
UM10161
Chapter 4: MAM Module
FLASH MEMORY BANK
BUFFERS
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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