Table of Contents
Advertisement
Page 32
5 D.C. Characteristics
Symbol
Core V
Supply Voltage
DD
IO V
Supply Voltage
DD
V
Input Voltage
IN
V
Output Voltage
OUT
T
Storage Temperature
STG
T
Solder Temperature/Time
SOL
Symbol
Core V
Supply Voltage
DD
HIO V
Supply Voltage
DD
NIO V
Supply Voltage
DD
V
Input Voltage
IN
T
Operating Temperature
OPR
Symbol
I
Quiescent Current
DDS
I
Input Leakage Current
IZ
I
Output Leakage Current
OZ
V
High Level Output Voltage
OH
V
Low Level Output Voltage
OL
V
High Level Input Voltage
IH
V
Low Level Input Voltage
IL
V
High Level Input Voltage
T+
V
Low Level Input Voltage
T-
V
Hysteresis Voltage
H1
R
Pull Down Resistance
PD
C
Input Pin Capacitance
I
C
Output Pin Capacitance
O
C
Bi-Directional Pin Capacitance
IO
S1D13706
X31B-A-001-08
Table 5-1: Absolute Maximum Ratings
Parameter
Table 5-2: Recommended Operating Conditions
Parameter
Note
The S1D13706 requires that Core VDD ≤ HIO VDD and Core VDD ≤ NIO VDD.
Table 5-3: Electrical Characteristics for VDD = 3.3V typical
Parameter
Rating
V
- 0.3 to 4.0
SS
V
- 0.3 to 4.0
SS
V
- 0.3 to IO V
+ 0.5
SS
DD
V
- 0.3 to IO V
+ 0.5
SS
DD
-65 to 150
260 for 10 sec. max at lead
Condition
Min
1.8
V
= 0 V
SS
3.0
1.8
V
= 0 V
SS
3.0
V
= 0 V
3.0
SS
V
SS
-40
Condition
Quiescent Conditions
VDD = min
I
=
-6mA (Type 2)
OH
-12mA (Type 3)
VDD = min
I
=
6mA (Type 2)
OL
12mA (Type 3)
LVTTL Level, V
= max 2.0
DD
LVTTL Level, V
= min
DD
LVTTL Schmitt
LVTTL Schmitt
LVTTL Schmitt
V
= V
I
DD
Epson Research and Development
Vancouver Design Center
Typ
Max
2.0
2.2
3.3
3.6
2.0
2.2
3.3
3.6
3.3
3.6
IO V
DD
25
85
Min
Typ
Max
170
-1
1
-1
1
V
- 0.4
DD
0.4
0.8
1.1
2.4
0.6
1.8
0.1
20
50
120
10
10
10
Hardware Functional Specification
Issue Date: 01/11/13
Units
V
V
V
V
° C
° C
Units
V
V
V
V
V
V
° C
Units
µA
µA
µA
V
V
V
V
V
V
V
kΩ
pF
pF
pF
Advertisement
Chapters
Table of Contents
