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SVD circuit current consumption
Unless otherwise specified: V
DD
item
*1
SVD circuit current
*1 This value is added to the current consumption during execution or current consumption during execution in heavy load protection
mode when the SVD circuit is active.
29.13
Flash Memory Characteristics
analog characteristics
Unless otherwise specified: V
DD
item
*1
Erase time
*1
Programming time
*2
Erase/program count
*1 Data transfer and data verification are included and erase/program start control time is not included.
*2 The erase/program count assumes that "erasing + programming" or "overwrite programming" is one count and the programmed
data is guaranteed to be retained for 10 years.
Flash memory current consumption
Unless otherwise specified: V
DD
CCLKGR[1:0] = 0x0 (gear ratio 1/1)
item
Flash memory erasing current
Flash memory programming current
*1 This value is added to the current consumption during execution when the Flash memory is being erased in self-programming mode.
*2 This value is added to the current consumption during execution when the Flash memory is being programmed in self-program-
ming mode.
S1C17624/604/622/602/621 TeChniCal Manual
= 1.8 to 3.6V, V
= 0V, Ta = 25°C
SS
Symbol
I
V
= 3.6V, SVDC[3:0] = 0x1
SVD
DD
= 2.7 to 3.6V (VD1MD = 1), V
Symbol
t
Erase 4K bytes
SE
t
Program 16 bits
BP
C
FEP
= 2.7 to 3.6V (VD1MD = 1), V
Symbol
*1
I
When CPU runs with 8MHz, VD1MD = 1
FERS
*2
I
When CPU runs with 8MHz, VD1MD = 1
FPRG
Seiko epson Corporation
29 eleCTRiCal ChaRaCTeRiSTiCS
Condition
= 0V, Ta = -25 to 70°C
SS
Condition
= 0V, Ta = 25°C, FLCYC[2:0] = 0x4 (1 cycle),
SS
Condition
Min.
Typ.
Max.
8
15
Min.
Typ.
Max.
25
20
1000
Min.
Typ.
Max.
7
14
7
14
unit
µA
unit
ms
µs
times
unit
mA
mA
29-15
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